Analysis and Design of Mosfets: Modeling, Simulation and by J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez (auth.) PDF

By J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez (auth.)

Analysis and layout of MOSFETs: Modeling, Simulation, and ParameterExtraction is the 1st booklet dedicated solely to a huge spectrum of research and layout concerns with regards to the semiconductor equipment known as metal-oxide semiconductor field-effect transistor (MOSFET). those matters contain MOSFET machine physics, modeling, numerical simulation, and parameter extraction. The dialogue of the applying of equipment simulation to the extraction of MOSFET parameters, equivalent to the edge voltage, potent channel lengths, and sequence resistances, is of specific curiosity to all readers and gives a worthy studying and reference software for college students, researchers and engineers.
Analysis and layout of MOSFETs: Modeling, Simulation, and ParameterExtraction, largely referenced, and containing greater than one hundred eighty illustrations, is an cutting edge and imperative new publication on MOSFETs layout technology.

Show description

Read or Download Analysis and Design of Mosfets: Modeling, Simulation and Parameter Extraction PDF

Similar analysis books

Read e-book online p-adic functional analysis: proceedings of the fourth PDF

This well timed reference comprises examine articles via approximately forty top mathematicians from North and South the United States, Europe, Africa, and Asia, offered on the Fourth foreign convention on p-adic sensible research held lately in Nijmegen, The Netherlands.

New PDF release: Laplace-, Fourier- und z-Transformation: Grundlagen und

Dieses Buch ist eine leicht zugängliche Einführung in die Theorie und praktische Handhabung der Laplace-, Fourier- und z-Transformation. Während Fourier-Reihe und Fourier-Transformation hauptsächlich zur Darstellung des Frequenzverhaltens von Signalen und Systemen eingesetzt wird, können mit der Laplace-Transformation lineare Differentialgleichungen gelöst und umfassende zeitkontinuierliche sign- und Systemuntersuchungen durchgeführt werden.

Download e-book for kindle: Principles of 3D Image Analysis and Synthesis by G. Häusler (auth.), Bernd Girod, Günther Greiner, Heinrich

Commonly, say 15 years in the past, three-d snapshot research (aka laptop vi­ sion) and three-d snapshot synthesis (aka special effects) have been separate fields. not often have been specialist

Additional info for Analysis and Design of Mosfets: Modeling, Simulation and Parameter Extraction

Sample text

0 f/) c -........ 1 V ,... 20 : Lateral and vertical drain current densities versus the lateral distance. 37) q where 4>(x = 0) ;: -4>s is the surface potential, and 4>(x = 00) ;: 4>8 is the bulk potential. Both 4>s and 4>8 are positive quantities. 38) and l\T(x = 0) = 4>8 + 4>s ;: l\Ts and l\T(x = 00) = O. Note that ~ = -dl\T/dx = -d4>/dx, and 4> and l\T are positive if the bands bend downward (depletion or inversion) and are negative if the bands bend upward (accumulation). 39) Es where (NA - No) is the net doping concentration, assumed to be positive since a p-type silicon is considered, and nj is the intrinsic free-carrier concentration.

84 V). 85 V is the weak or moderate inversion region. It can be seen in Fig. 816 V. Also note that Ws is insensitive to Vos in the strong inversion region. 21 : Cross section of an MOS device showing the oxide charges, oxide capacitance, and capacitance in the semiconductor (after Nicollian and Brews [29]). 10 9 u.. 8 0w 7 u 6 z

MOSFET PHYSICS AND MODELING P- TYPE C C -QO +QO COX ~IDEAL e-V CURVE Cox \ \ ...... , ideal C-V curve) for (a) positive oxide charge, p-type substrate, (b) positive oxide charge, n-type substrate, (c) negative oxide charge, p-type substrate, and (d) negative oxide charge, n-type substrate (after Nicollian and Brews [29]). 24: Surface band bending versus gate bias simulated from MICROTEC (line). 73V. The surface band bending at the onset of inversion can also be derived using a more rigorous approach.

Download PDF sample

Rated 4.83 of 5 – based on 19 votes